IndiumV3, Russie, Analysis, bibRecord, 000450

Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure

Identifieur interne : 000450 ( Russie/Analysis ); précédent : 000449; suivant : 000451

Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure

Auteurs : RBID : Pascal:05-0080453

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Epitaxie phase vapeur, Méthode MOVPE, Microcavité, Faisceau électronique, Densité courant, Cathodoluminescence, Laser semiconducteur, Gallium phosphure, Indium phosphure, Composé ternaire, Semiconducteur III-V, Nanomatériau, Puits quantique multiple, GaInP, Ga In P, AlGaInP, Al Ga In P, 8107S, 4255P, Substrat GaAs.

English descriptors

KwdEn :
- Cathodoluminescence, Crystal growth from vapors, Current density, Electron beam, Experimental study, Gallium phosphides, III-V semiconductors, Indium phosphides, MOVPE method, Microcavities, Multiple quantum well, Nanostructured materials, Semiconductor lasers, Ternary compounds, VPE.

Abstract

Twenty five-period Ga_0.5In_0.5P/(Al_0.7Ga_0.3)_0.5In_0.5P quantum well (QW) structure was grown by MOVPE on GaAs substrates misoriented by 10° from (00 1) to (111)A and fabricated into a microcavities with dielectric oxide mirrors. Lasing in the 625-650 nm spectral range with output power up to 9 W was achieved under scanning electron beam longitudinal pumping at room temperature. The laser wavelength, threshold and output power were found to depend critically on the alignment of QW period with both the cavity and the multi-quantum well (MQW) gain spectrum. The minimum threshold current density for a 40 keV electron energy was 8 A/cm². We have shown that low-threshold and high-power lasing requires the position of the QWs to coincide with the antinodes of the cavity resonance. Furthermore, the maximum of the gain spectrum, for ground state transitions, should also align with this etalon resonance. In order to control the lasing threshold to within 10% of its minimum, the MQW period should be tuned to the optimum value with an accuracy of about 1%.

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Pascal:05-0080453

Le document en format XML

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<author><name sortKey="Bondarev, V Yu" uniqKey="Bondarev V">V. Yu. Bondarev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute of RAS, 53 Leninsky pr.</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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<author><name sortKey="Kozlovsky, V I" uniqKey="Kozlovsky V">V. I. Kozlovsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute of RAS, 53 Leninsky pr.</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
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<country>Russie</country>
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<author><name sortKey="Krysa, A B" uniqKey="Krysa A">A. B. Krysa</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EPSRC National Centre for III-V Technologies, University of Sheffield</s1>
<s2>Sheffield S1 3JD</s2>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
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<country>Royaume-Uni</country>
<wicri:noRegion>Sheffield S1 3JD</wicri:noRegion>
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<author><name sortKey="Roberts, J S" uniqKey="Roberts J">J. S. Roberts</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EPSRC National Centre for III-V Technologies, University of Sheffield</s1>
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<author><name sortKey="Skasyrsky, Ya K" uniqKey="Skasyrsky Y">Ya. K. Skasyrsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P.N. Lebedev Physical Institute of RAS, 53 Leninsky pr.</s1>
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<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term>
<term>Crystal growth from vapors</term>
<term>Current density</term>
<term>Electron beam</term>
<term>Experimental study</term>
<term>Gallium phosphides</term>
<term>III-V semiconductors</term>
<term>Indium phosphides</term>
<term>MOVPE method</term>
<term>Microcavities</term>
<term>Multiple quantum well</term>
<term>Nanostructured materials</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie phase vapeur</term>
<term>Méthode MOVPE</term>
<term>Microcavité</term>
<term>Faisceau électronique</term>
<term>Densité courant</term>
<term>Cathodoluminescence</term>
<term>Laser semiconducteur</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Composé ternaire</term>
<term>Semiconducteur III-V</term>
<term>Nanomatériau</term>
<term>Puits quantique multiple</term>
<term>GaInP</term>
<term>Ga In P</term>
<term>AlGaInP</term>
<term>Al Ga In P</term>
<term>8107S</term>
<term>4255P</term>
<term>Substrat GaAs</term>
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<front><div type="abstract" xml:lang="en">Twenty five-period Ga<sub>0.5</sub>
In<sub>0.5</sub>
P/(Al<sub>0.7</sub>
Ga<sub>0.3</sub>
)<sub>0.5</sub>
In<sub>0.5</sub>
P quantum well (QW) structure was grown by MOVPE on GaAs substrates misoriented by 10° from (00 1) to (111)A and fabricated into a microcavities with dielectric oxide mirrors. Lasing in the 625-650 nm spectral range with output power up to 9 W was achieved under scanning electron beam longitudinal pumping at room temperature. The laser wavelength, threshold and output power were found to depend critically on the alignment of QW period with both the cavity and the multi-quantum well (MQW) gain spectrum. The minimum threshold current density for a 40 keV electron energy was 8 A/cm<sup>2</sup>
. We have shown that low-threshold and high-power lasing requires the position of the QWs to coincide with the antinodes of the cavity resonance. Furthermore, the maximum of the gain spectrum, for ground state transitions, should also align with this etalon resonance. In order to control the lasing threshold to within 10% of its minimum, the MQW period should be tuned to the optimum value with an accuracy of about 1%.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure</s1>
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<fA11 i1="01" i2="1"><s1>BONDAREV (V. Yu.)</s1>
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<fA11 i1="02" i2="1"><s1>KOZLOVSKY (V. I.)</s1>
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<fA14 i1="01"><s1>P.N. Lebedev Physical Institute of RAS, 53 Leninsky pr.</s1>
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<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>EPSRC National Centre for III-V Technologies, University of Sheffield</s1>
<s2>Sheffield S1 3JD</s2>
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<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA15 i1="01"><s1>Sandia National Laboratory</s1>
<s2>Albuquerque, NM</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Twenty five-period Ga<sub>0.5</sub>
In<sub>0.5</sub>
P/(Al<sub>0.7</sub>
Ga<sub>0.3</sub>
)<sub>0.5</sub>
In<sub>0.5</sub>
P quantum well (QW) structure was grown by MOVPE on GaAs substrates misoriented by 10° from (00 1) to (111)A and fabricated into a microcavities with dielectric oxide mirrors. Lasing in the 625-650 nm spectral range with output power up to 9 W was achieved under scanning electron beam longitudinal pumping at room temperature. The laser wavelength, threshold and output power were found to depend critically on the alignment of QW period with both the cavity and the multi-quantum well (MQW) gain spectrum. The minimum threshold current density for a 40 keV electron energy was 8 A/cm<sup>2</sup>
. We have shown that low-threshold and high-power lasing requires the position of the QWs to coincide with the antinodes of the cavity resonance. Furthermore, the maximum of the gain spectrum, for ground state transitions, should also align with this etalon resonance. In order to control the lasing threshold to within 10% of its minimum, the MQW period should be tuned to the optimum value with an accuracy of about 1%.</s0>
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<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
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<fC03 i1="04" i2="X" l="SPA"><s0>Método MOVPE</s0>
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<fC03 i1="05" i2="3" l="FRE"><s0>Microcavité</s0>
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<s5>21</s5>
</fC03>
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<s5>21</s5>
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<s5>52</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>Ga In P</s0>
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<s5>53</s5>
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<s5>54</s5>
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<s4>INC</s4>
<s5>55</s5>
</fC03>
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<s2>PAC</s2>
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<s5>56</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
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<s2>12</s2>
<s3>Lahina, Hawaii USA</s3>
<s4>2004-05-30</s4>
</fA30>
</pR>
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Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure

Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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